Electrically active centers introduced in p‐type Si by rapid thermal processing

Autor:	Edouard Monakhov, Jeyanthinath Mayandi, Chi Kwong Tang, Bengt Gunnar Svensson, Arve Holt, Eiliv Lund
Rok vydání:	2010
Předmět:	Materials science Deep-level transient spectroscopy Silicon chemistry Rapid thermal processing Kinetics Valence band Analytical chemistry chemistry.chemical_element Thermal stability Thermal treatment Rapid thermal annealing Condensed Matter Physics
Zdroj:	physica status solidi c. 8:725-728
ISSN:	1610-1642 1862-6351
DOI:	10.1002/pssc.201000263
Popis:	Electrically active defects introduced in boron-doped silicon by rapid thermal annealing were studied using deep level transient spectroscopy. Thermal treatment at 1000 °C for 2 minutes induced two hole traps with energy levels at 0.3 eV and 0.4 eV above the valence band edge and concentration between 5 × 1012 and 5 × 1013cm–3. Both defects exhibit Poole-Frenkel effect and show thermal stability up to 650 °C. Depth profiling reveals that these defects extend more than 3 m into the bulk and decrease in concentration towards the surface. The origin and formation kinetics of these centers will be discussed and compared with theoretical predictions in the literature. (© 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::edbc4ac518f0a7ff7d7f65eba8900c24 https://doi.org/10.1002/pssc.201000263 Zobrazit plný text záznamu Plný text