The Mechanism of Operation of Lateral and Vertical Organic Field Effect Transistors

Autor:	Yohai Roichman, Michael Greenman, Nir Tessler, Ariel J. Ben-Sasson
Rok vydání:	2014
Předmět:	Chemistry business.industry Organic devices Transistor Molecular electronics General Chemistry law.invention Mechanism (engineering) Semiconductor Hardware_GENERAL law Hardware_INTEGRATEDCIRCUITS Optoelectronics Field-effect transistor business
Zdroj:	Israel Journal of Chemistry. 54:568-585
ISSN:	0021-2148
DOI:	10.1002/ijch.201400040
Popis:	In this contribution, we describe the working prin- ciples of organic field effect transistors. To place it in con- text, we start with a brief description of some aspects of semiconductor field effect transistors. We then describe the standard structure and properties of laterally aligned field effect transistors and at the end, touch upon some proper- ties of the newly developed vertically stacked field effect transistors.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::edb82442a45d24b782728077ccbc848d https://doi.org/10.1002/ijch.201400040 Zobrazit plný text záznamu Plný text ve formátu PDF