AlGaInP growth parameter optimisation during MOVPE for opto-electronic devices

Autor:	Markus Weyers, Martin Zorn, T. Schenk, J.-T. Zettler, T. Trepk
Rok vydání:	2007
Předmět:	business.industry Bowing chemistry.chemical_element Chemical vapor deposition Condensed Matter Physics Inorganic Chemistry Optics Semiconductor chemistry Aluminium Materials Chemistry Optoelectronics Wafer Metalorganic vapour phase epitaxy Growth rate business Indium
Zdroj:	Journal of Crystal Growth. 298:23-27
ISSN:	0022-0248
DOI:	10.1016/j.jcrysgro.2006.10.212
Popis:	For (Al x Ga 1-x ) 1-y In y P growth on GaAs for opto-electronic devices in metal-organic vapour phase epitaxy an accurate control of the aluminium content x and of the indium content y is crucial. Therefore, we applied an in situ curvature sensor to determine the lattice matching (i.e. indium content y) of the growing material. It was found that AlGaInP which is lattice matched at room temperature is tensile strained at growth temperature leading to a concave substrate bowing during growth. Overgrowing AlGaInP with GaAs an additional change in wafer bowing was observed presumably caused by indium segregation which is supported by a simulation of the measured data. Furthermore, for an accurate in situ determination of the aluminium content x and of the growth rate a high-temperature database for the optical constants n and k of lattice matched AlGaInP was established. Taking reflectance transients during growth of AlGaInP layers a numerical fit to the data enables a determination of the growth rate and the aluminium content.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::edabd681838b053e93e0ca40f43ece24 https://doi.org/10.1016/j.jcrysgro.2006.10.212 Zobrazit plný text záznamu Full Text from ScienceDirect