An accurate method to check chemical interfaces of epitaxial III‐V compounds

Autor:	A. Friederich, Manijeh Razeghi, G. Laurencin, R. Bisaro
Rok vydání:	1982
Předmět:	Physics and Astronomy (miscellaneous) Auger effect business.industry Inorganic chemistry Heterojunction Chemical vapor deposition Double heterostructure Epitaxy Auger symbols.namesake symbols Optoelectronics business Order of magnitude Group 2 organometallic chemistry
Zdroj:	Applied Physics Letters. 40:978-980
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.92974
Popis:	We have developed a method of chemical beveling coupled with line scan Auger measurements to check abrupt interfaces of epitaxial III‐V compounds. Interface widths between 53 and 89 A have been measured by this method for an InP/Ga0.47In0.53As/InP double heterostructure grown by low pressure metalorganic chemical vapor deposition. The ultimate width checkable by this method lies between 10 and 15 A and is of the order of magnitude of the escape depth of the Auger electrons selected.
Databáze:	OpenAIRE
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