Tunneling hot electron transistor as a high power source at terahertz frequencies

Autor:	M. W. Dellow, N. J. Cronin, S. J. Bending
Rok vydání:	1994
Předmět:	Physics Physics and Astronomy (miscellaneous) business.industry Terahertz radiation Amplifier Transistor Resonant-tunneling diode Heterojunction Power (physics) law.invention law Optoelectronics business Hot electron Quantum tunnelling
Zdroj:	Applied Physics Letters. 65:2463-2465
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.112708
Popis:	A novel device is proposed, based upon a tunneling hot electron transfer amplifier, which exhibits the characteristics of negative differential resistance (NDR) coupled with high current gain. The mechanism which produces the NDR is known to be extremely fast. The combination of these features suggests that such a device could be used as a high power source of terahertz radiation.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::ed8c1a8c9dc87889e37556711c9dc978 https://doi.org/10.1063/1.112708 Zobrazit plný text záznamu