A nanoscale AlGaN/GaN HEMT on BGO substrate with recessed T gate for high frequency applications

Autor:	S. Anju, V. Suresh Babu, Biji Jacob, Geenu Paul
Rok vydání:	2023
Předmět:	Materials science business.industry Oscillation Terahertz radiation Transconductance Optoelectronics General Medicine Substrate (electronics) High-electron-mobility transistor Radio frequency business Current density Nanoscopic scale
Zdroj:	Materials Today: Proceedings. 80:2076-2079
ISSN:	2214-7853
Popis:	In this paper a recess gate AlGaN/GaN HEMT on beta gallium oxide (BGO) is designed and analysed using Silvaco ATLAS TCAD software. The DC and RF performance of the device is compared with a schottky gate AlGaN/GaN HEMT on BGO substrate. For optimizing the gate recess depth, three variations with recess depths 6 nm, 12 nm and 20 nm is also simulated. A highest transconductance of 0.4 mS/ µm is observed for recess gate AlGaN/GaN HEMT on BGO substrate with a recess gate depth of 20 nm with a decrease in current density. The radio frequency performance is also highest for the recess gate AlGaN/GaN HEMT with recess gate depth of 20 nm. The device exhibited a maximum oscillation frequency of 2.6 THZ which is highest till reported.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::ed84c0c232313b449057e3d99401fb8d https://doi.org/10.1016/j.matpr.2021.06.116 Zobrazit plný text záznamu Full Text from ScienceDirect