Electronic structure of InGaAs and band offsets in InGaAs/GaAs superlattices

Autor:	Clarence Cherian Matthai, M. Oloumi
Rok vydání:	1991
Předmět:	Condensed matter physics Chemistry Band gap Superlattice Ab initio Electronic structure Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter Physics Semimetal Band offset Pseudopotential Condensed Matter::Materials Science General Materials Science Electronic band structure
Zdroj:	Journal of Physics: Condensed Matter. 3:9981-9987
ISSN:	1361-648X 0953-8984
DOI:	10.1088/0953-8984/3/50/004
Popis:	The authors report the results of self-consistent density functional calculations using ab initio pseudo-potentials on InxGa1-xAs/GaAs superlattices for x=0.25, 0.5, 0.75 and 1.0. The calculations were performed for two strained configurations. It was found that for GaAs substrates the valence band offset was almost independent of In content. For the case of InxGa1-xAs substrates, the valence band offset appears to vary non-linearly with the amount of strain in the GaAs layer. As a precursor to obtaining the band offsets, the electronic band structure of InGaAs was calculated for different compositions and strain conditions. These results are analysed and compared with experiment.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::ed79b221374c3d61748de205e9d377ce https://doi.org/10.1088/0953-8984/3/50/004 Zobrazit plný text záznamu