Analysis of MBE growth and atomic exchange in thin highly strained InAs layers

Autor:	C. d’Anterroches, Jean-Michel Gérard
Rok vydání:	1994
Předmět:	chemistry.chemical_compound Materials science Condensed matter physics Molecular beam epitaxial growth chemistry Impurity Monolayer Heterojunction Thin film Instrumentation Quantum well Molecular beam epitaxy Gallium arsenide
Zdroj:	Microscopy Microanalysis Microstructures. 5:213-236
ISSN:	1154-2799
DOI:	10.1051/mmm:0199400503021300
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::ed61efb9393050bacb5068cb72863d6e https://doi.org/10.1051/mmm:0199400503021300 Zobrazit plný text záznamu