Study of pit formation in MBE grown GaP on misoriented Si
| Autor: | Chaomin Zhang, Richard R. King, Michael Goryll, Christiana B. Honsberg, Srinath Murali |
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| Rok vydání: | 2020 |
| Předmět: |
Diffraction
Materials science business.industry Atomic force microscopy Process Chemistry and Technology Pit formation Multijunction photovoltaic cell Surfaces Coatings and Films Electronic Optical and Magnetic Materials Etching (microfabrication) Materials Chemistry Optoelectronics Wafer Electrical and Electronic Engineering business Instrumentation |
| Zdroj: | Journal of Vacuum Science & Technology B. 38:032201 |
| ISSN: | 2166-2754 2166-2746 |
| Popis: | GaP-based alloys can be grown lattice-matched to Si, making them an attractive choice for use in Si-based multijunction solar cells. This work focuses on the growth of GaP on Si with the aim to improve the surface quality of GaP. The Si wafers used in this study were of precise (001), (001) 4° offcut toward [110], and (001) 6° offcut toward [110] orientations. GaP of high crystalline quality was grown, and high-resolution x-ray diffraction and atomic force microscopy (AFM) measurements revealed the presence of pits on the surface of GaP. Similar pits were also observed on surface of Si post growth when AFM imaging was done after chemically etching the GaP layers. The use of offcut wafers demonstrated a reduction in the pit density from over 100 μm−2 to values less than 1 μm−2 in both GaP and Si. |
| Databáze: | OpenAIRE |
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