Comparative analysis of RF LDMOS capacitance reliability under accelerated ageing tests
| Autor: | Karine Mourgues, Mohamed Ali Belaïd, Mohamed Masmoudi, J. Marcon, K. Ketata, M. Gares |
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| Rok vydání: | 2007 |
| Předmět: |
LDMOS
Thermal shock Materials science business.industry Electrical engineering Temperature cycling Condensed Matter Physics computer.software_genre Capacitance Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Simulation software Stress (mechanics) Reliability (semiconductor) Electrical and Electronic Engineering Composite material Safety Risk Reliability and Quality business computer Hot-carrier injection |
| Zdroj: | Microelectronics Reliability. 47:59-64 |
| ISSN: | 0026-2714 |
| DOI: | 10.1016/j.microrel.2006.04.009 |
| Popis: | This paper presents the results of comparative reliability study of C–V characteristics through three accelerated ageing tests for stress applied to an RF LDMOS: Thermal shock tests (TST, air–air test), thermal cycling tests (TCT, air–air test) and high temperature storage life (HTSL). The two first tests are carried out with a drain current flowing through the device during stress. The investigation findings of electrical parameter degradations after various ageing tests are discussed. Feedback capacitance (Crs) is reduced by 16% and gate–drain capacitance (Cgd) by 42%. This means that the tracking of these parameters enables to consider the hot carrier injection as the dominant degradation phenomenon. A physical simulation software has been used to confirm qualitatively degradation phenomena. |
| Databáze: | OpenAIRE |
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