Effect of trivalent element doping on structural and optical properties of SnO2 thin films grown by pulsed laser deposition technique

Autor:	Geun Woo Kim, Tae Kwon Song, Yong Jun Seo, Keun Young Park, M. S. Anwar, Bon Heun Koo, Chang Hoon Sung, Si Nae Heo
Rok vydání:	2012
Předmět:	Carbon film Materials science Photoluminescence Electrical resistivity and conductivity X-ray crystallography Doping Analytical chemistry General Physics and Astronomy General Materials Science Substrate (electronics) Thin film Pulsed laser deposition
Zdroj:	Current Applied Physics. 12:S21-S24
ISSN:	1567-1739
DOI:	10.1016/j.cap.2012.05.041
Popis:	In this study, trivalent element doped SnO2 thin films were deposited on glass substrate using pulsed laser deposition method. The effect of trivalent elements (Al2O3, Bi2O3, Sb2O3 and Y2O3) doping on the structural, electrical and optical properties have been studied using X-ray diffraction (XRD), photoluminescence and resistivity measurements. XRD results indicated that all films exhibited single phase nature with (101) preferred orientation. Among all the films, the 6 wt% Sb doped film had the lowest value of the resistivity. Photoluminescence study inferred that all the films showed violet–blue emission and the intensity of this emission decrease with the increase in the doping content.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::ed3a1e4bda8d0acd50b3d926d94b263e https://doi.org/10.1016/j.cap.2012.05.041 Zobrazit plný text záznamu Full Text from ScienceDirect