Effect of Crystallinity on the Electrical Characteristics of Poly-Si Tunneling FETs via Green Nanosecond Laser Crystallization
| Autor: | Kai-Chi Chuang, Huang-Chung Cheng, Wei-Shuo Li, Hao-Tung Chung, Chun-Ting Chen, Yu-Wei Liu, Jun-Dao Luo, Kuan-Neng Chen, Wen-Hsien Huang, Chan-Yu Liao, Jia-Min Shieh, Yi-Shao Li |
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| Rok vydání: | 2021 |
| Předmět: |
010302 applied physics
Materials science Silicon business.industry chemistry.chemical_element engineering.material 01 natural sciences Electronic Optical and Magnetic Materials law.invention Crystallinity Polycrystalline silicon chemistry law Thin-film transistor 0103 physical sciences engineering Optoelectronics Grain boundary Field-effect transistor Electrical and Electronic Engineering Thin film Crystallization business |
| Zdroj: | IEEE Electron Device Letters. 42:164-167 |
| ISSN: | 1558-0563 0741-3106 |
| Popis: | This letter reports the fabrication of polycrystalline silicon (poly-Si) tunneling field effect transistors (Tunneling FETs) using green nanosecond laser crystallization (GLC). During the GLC process, the Si is full-melted by laser scanning, hence the recrystallized poly-Si thin films with grain size as large as $1.2~\mu \text{m}$ are attained. This makes it possible to fabricate tunneling FET with high-quali ty poly-Si thin films. Compare with the tunneling FETs fabricated by solid phase crystallization (SPC), the ones via GLC show better subthreshold swing (S.S) of 418 mV/dec. and larger on/off ratio of $6.02 \times 10^{5}$ . Moreover, the activation energy curve is also presented to further demonstrate the con nection between device performance and crystallinity of poly-Si thin films. |
| Databáze: | OpenAIRE |
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