Structural, optical and electrical properties of copper antimony sulfide thin films grown by a citrate-assisted single chemical bath deposition
Autor: | R. Silva González, C. J. Diliegros-Godines, Mou Pal, F.E. Loranca-Ramos |
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Rok vydání: | 2018 |
Předmět: |
Materials science
Sulfide Annealing (metallurgy) Inorganic chemistry General Physics and Astronomy chemistry.chemical_element 02 engineering and technology engineering.material 010402 general chemistry 01 natural sciences Antimony Electrical resistivity and conductivity Thin film chemistry.chemical_classification Tetrahedrite Surfaces and Interfaces General Chemistry 021001 nanoscience & nanotechnology Condensed Matter Physics Copper 0104 chemical sciences Surfaces Coatings and Films chemistry engineering 0210 nano-technology Chemical bath deposition |
Zdroj: | Applied Surface Science. 427:1099-1106 |
ISSN: | 0169-4332 |
DOI: | 10.1016/j.apsusc.2017.08.027 |
Popis: | Copper antimony sulfide (CAS) has been proposed as low toxicity and earth abundant absorber materials for thin film photovoltaics due to their suitable optical band gap, high absorption coefficient and p-type electrical conductivity. The present work reports the formation of copper antimony sulfide by chemical bath deposition using sodium citrate as a complexing agent. We show that by tuning the annealing condition, one can obtain either chalcostibite or tetrahedrite phase. However, the main challenge was co-deposition of copper and antimony as ternary sulfides from a single chemical bath due to the distinct chemical behavior of these metals. The as-deposited films were subjected to several trials of thermal treatment using different temperatures and time to find the optimized annealing condition. The films were characterized by different techniques including Raman spectroscopy, X-ray diffraction (XRD), profilometer, scanning electron microscopy (SEM), UV–vis spectrophotometer, and Hall Effect measurements. The results show that the formation of chalcostibite and tetrahedrite phases is highly sensitive to annealing conditions. The electrical properties obtained for the chalcostibite films varied as the annealing temperature increases from 280 to 350 °C: hole concentration (n) = 1017–1018 cm−3, resistivity (ρ) = 1.74–2.14 Ωcm and carrier mobility (μ) = 4.7–9.26 cm2/Vseg. While for the tetrahedrite films, the electrical properties were n = 5 × 1019 cm−3, μ = 18.24 cm2/Vseg, and ρ = 5.8 × 10−3 Ωcm. A possible mechanism for the formation of ternary copper antimony sulfide has also been proposed. |
Databáze: | OpenAIRE |
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