Recess-type waveguide integrated germanium on silicon avalanche photodiode

Autor:	Wei Qian, Yen-jung Chen, Erin Carabajal, David Kohen, Mengyuan Huang, Mahtab Hakami, Carsten Brandt, Gregory Lovell, Ansheng Liu, Kiyoung Lee, Yann Malinge, Erle Guillermo, Seth Slavin, Kelly C. Magruder, Parastou Fakhimi, Hao-Hsiang Liao
Rok vydání:	2021
Předmět:	Materials science Silicon Dynamic range business.industry chemistry.chemical_element Germanium Avalanche photodiode Waveguide (optics) chemistry Wavelength-division multiplexing Coupling efficiency Optoelectronics business Sensitivity (electronics)
Zdroj:	OFC
DOI:	10.1364/ofc.2021.f2c.3
Popis:	We demonstrate a recess-type Ge on Si WGAPD receiver with 106Gb/s PAM4 overload >0dBm and unstressed/stressed sensitivities of -18.9/18dBm, which provides about 19dB dynamic range for 100Gb/s per lane applications.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::ed24471278b68aeaefeca7d14f626abf https://doi.org/10.1364/ofc.2021.f2c.3 Zobrazit plný text záznamu