Electrical Properties of p-Cu2O/CdS/n-Si Heterojunction

Autor:	Eduard V. Maistruk, Taras T. Kovaliuk, D. P. Koziarskyi, I. P. Koziarskyi
Rok vydání:	2021
Předmět:	Materials science Fabrication business.industry Sputtering Optoelectronics Heterojunction Magnetic films Radio frequency Thin film Sputter deposition business Surface states
Zdroj:	2021 IEEE 11th International Conference Nanomaterials: Applications & Properties (NAP).
DOI:	10.1109/nap51885.2021.9568539
Popis:	The conditions for the fabrication of anisotype heterostructures p-Cu 2 O/CdS/n-Si by the method of RF magnetron sputtering of CdS and Cu 2 O thin films onto n-Si crystalline substrates have been studied. The mechanisms of current transfer are analyzed by temperature dependences of I-V characteristics. The influence of light on the electrical properties of the p-Cu 2 O/CdS/n-Si heterostructure is determined.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::ed16a9b6e72b28dc16ec338882ffbaeb https://doi.org/10.1109/nap51885.2021.9568539 Zobrazit plný text záznamu