Electrical Properties of p-Cu2O/CdS/n-Si Heterojunction

Autor: Eduard V. Maistruk, Taras T. Kovaliuk, D. P. Koziarskyi, I. P. Koziarskyi
Rok vydání: 2021
Předmět:
Zdroj: 2021 IEEE 11th International Conference Nanomaterials: Applications & Properties (NAP).
Popis: The conditions for the fabrication of anisotype heterostructures p-Cu 2 O/CdS/n-Si by the method of RF magnetron sputtering of CdS and Cu 2 O thin films onto n-Si crystalline substrates have been studied. The mechanisms of current transfer are analyzed by temperature dependences of I-V characteristics. The influence of light on the electrical properties of the p-Cu 2 O/CdS/n-Si heterostructure is determined.
Databáze: OpenAIRE