Recent advances in kW-level pulsed GaN transistors with very high efficiency
| Autor: | James Custer, Gabriele Formicone, John Walker |
|---|---|
| Rok vydání: | 2016 |
| Předmět: |
Materials science
business.industry Transistor Gallium nitride Hardware_PERFORMANCEANDRELIABILITY High-electron-mobility transistor law.invention chemistry.chemical_compound Electricity generation chemistry Hardware_GENERAL law Logic gate Hardware_INTEGRATEDCIRCUITS Optoelectronics Radio frequency business Power density Voltage |
| Zdroj: | 2016 21st International Conference on Microwave, Radar and Wireless Communications (MIKON). |
| Popis: | This paper reports on GaN transistors having a power output in excess of 1kW for use at L-band frequencies. A 1200W GaN HEMT will be reported with 85% efficiency, this is believed to be the highest power and efficiency combination ever reported for an L band transistor. The importance of using gate pulsing is illustrated to achieve these high efficiencies. The development of GaN transistors that can operate from a 150V drain voltage with a power density of 30W/mm is also reported, and the potential of these new transistors for achieving multi-kW power levels at L band is also considered. |
| Databáze: | OpenAIRE |
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