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In this work we study the effect of Cr impurities, diffused onto GaSb substrates, on the formation of nanodot hexagonal arrays created by low energy argon ion sputtering. For the same sputtering conditions, the dimensions of the dots in the Cr-diffused sample are smaller than in the case of the pure sample. EDX data revealed that the sputtering induces a more pronounced Ga enrichment in the case of Cr-diffused sample. It is proved that oblique incidence in rotating configuration most probably delays the formation of the nanodots compared to previously reported normal incidence experiments. The diffusion of Cr atoms onto the GaSb surface induced the formation of defects upon sputtering. |
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