Strained Si, SiGe, and Ge on-insulator: review of wafer bonding fabrication techniques
| Autor: | Gianni Taraschi, Eugene A. Fitzgerald, Arthur J. Pitera |
|---|---|
| Rok vydání: | 2004 |
| Předmět: |
Materials science
Fabrication Silicon business.industry Wafer bonding chemistry.chemical_element Insulator (electricity) Condensed Matter Physics Layer thickness Electronic Optical and Magnetic Materials chemistry Materials Chemistry Electronic engineering Optoelectronics Electrical and Electronic Engineering business |
| Zdroj: | Solid-State Electronics. 48:1297-1305 |
| ISSN: | 0038-1101 |
| DOI: | 10.1016/j.sse.2004.01.012 |
| Popis: | Techniques for fabricating strained Si, SiGe, and Ge on-insulator include SIMOX, Ge condensation and wafer bonding. In this paper, a brief introduction of each method is presented, with a detailed discussion of wafer bonding approaches for strained Si, SiGe, and Ge on-insulator. Wafer bonding with stop layers is found to be the most general approach with the ability to create ultra-thin layers of strained Si, SiGe, and Ge on-insulator with low threading dislocation densities and precise control over layer thickness. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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