Relaxation of upper laser levels in terahertz silicon lasers

Autor:	R.Kh. Zhukavin, Tjeerd O. Klaassen, P.J. Phillips, H.-W. Hübers, J.N. Hovenier, V.N. Shastin, S.G. Pavlov, D.A. Carder
Rok vydání:	2008
Předmět:	Range (particle radiation) Materials science Silicon business.industry Terahertz radiation chemistry.chemical_element Laser law.invention Semiconductor laser theory chemistry law Excited state Relaxation (physics) Optoelectronics business
Zdroj:	2008 5th IEEE International Conference on Group IV Photonics.
DOI:	10.1109/group4.2008.4638085
Popis:	Relaxation of lower exited states of group-V donors in silicon which serve as upper working states of intracenter silicon lasers has been experimentally determined. The measurements show that decay times of 2p0 and 2pplusmn states lie in the range of 4-90 ps.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::ed0a8273f88125884ed03cd44cf088d5 https://doi.org/10.1109/group4.2008.4638085 Zobrazit plný text záznamu