Development of a new hybrid silicon thin‐film transistor fabrication process
| Autor: | Sung Haeng Cho, Hyungjun Kim, Shi Yul Kim, Yong Mo Choi, Yu Gwang Jeong, Chang-Oh Jeong |
|---|---|
| Rok vydání: | 2009 |
| Předmět: |
Fabrication
Materials science Liquid-crystal display Silicon business.industry Transistor Electrical engineering chemistry.chemical_element Substrate (electronics) Active-matrix liquid-crystal display law.invention chemistry Thin-film transistor law Gate driver Optoelectronics General Materials Science Electrical and Electronic Engineering business |
| Zdroj: | Journal of Information Display. 10:33-36 |
| ISSN: | 2158-1606 1598-0316 |
| DOI: | 10.1080/15980316.2009.9652077 |
| Popis: | A new hybrid silicon thin‐film transistor (TFT) fabrication process using the DPSS laser crystallization technique was developed in this study to realize low‐temperature poly‐Si (LTPS) and a‐Si:H TFTs on the same substrate as a backplane of the active‐matrix liquid crystal flat‐panel display (AMLCD). LTPS TFTs were integrated into the peripheral area of the active‐matrix LCD panel for the gate driver circuit, and a‐Si:H TFTs were used as a switching device of the pixel electrode in the active area. The technology was developed based on the current a‐Si:H TFT fabrication process in the bottom‐gate, back‐channel etch‐type configuration. The ion‐doping and activation processes, which are required in the conventional LTPS technology, were thus not introduced, and the field effect mobility values of 4∼5 cm2/V·s and 0.5 cm2/V·s for the LTPS and a‐Si:H TFTs, respectively, were obtained. The application of this technology was demonstrated on the 14.1” WXGA+(1440 × 900) AMLCD panel, and a smaller area, lo... |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|