New direction's piezoelectricity and new applications of two-dimensional group V-IV-III-VI films: A theoretical study
| Autor: | Yang Wu, Sheng-Nan Zhao, Liang-Hui Zhu, He-Na Zhang, Dong-Ran Zhu, Xiao-Chun Wang |
|---|---|
| Rok vydání: | 2020 |
| Předmět: |
Materials science
business.industry Film plane Point reflection Nanowire Gallium nitride 02 engineering and technology 010402 general chemistry 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Piezoelectricity Atomic and Molecular Physics and Optics 0104 chemical sciences Electronic Optical and Magnetic Materials Stress (mechanics) chemistry.chemical_compound chemistry Perpendicular Optoelectronics 0210 nano-technology business Order of magnitude |
| Zdroj: | Physica E: Low-dimensional Systems and Nanostructures. 124:114214 |
| ISSN: | 1386-9477 |
| DOI: | 10.1016/j.physe.2020.114214 |
| Popis: | It is challenging to realize the piezoelectricity of 2D films by exerting the stress along the direction perpendicular to the film plane. The ability to transfer the mechanical stress perpendicular to the films into electric energy can significantly enhance the transfer efficiency and have more broad application prospects, such as medical device (sphygmomanometer) and ultrathin nano-sensor devices (tactile sensor as the bionic skin of robot). Then the out-of-plane piezoelectric coefficients e33 and d33 of film have the special importance. We investigate the lattice and piezoelectricity properties of group V-IV-III-VI films (SnN–InO, GeN-GaO, and SiN–AlO) using first-principles calculations. It is found that they have the promising piezoelectric coefficients e33 and d33 due to their broken inversion symmetry along the direction perpendicular to the film plane. The e33 (38.69 × 10−10 C m−1) of SiN–AlO is the largest, which is larger than that (5.20 × 10−10 C m−1) of gallium nitride nanowires' surface layers by 7.4 times, while the out-of-plane piezoelectric strain coefficient d33 (5.29 × 103 pm V−1) of SnN–InO is the largest, which is one order of magnitude larger than that (0.42 × 103 pm V−1) of the Y-doped ZnO nano sheets. The special direction's piezoelectricity of the SiN–AlO and SnN–InO films indicates that they have the new applications in nanoscale energy harvesting devices, nano-sensor and other micro-electromechanical devices, which can transfer the mechanical stress perpendicular to the films into electric energy. |
| Databáze: | OpenAIRE |
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