Microstress in Reaction-Bonded SiC from Crystallization Expansion of Silicon
| Autor: | Francis W. L. Esmonde-White, John W. Halloran, Bradley L. Wing |
|---|---|
| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Materials science Silicon Nanocrystalline silicon chemistry.chemical_element 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Thermal expansion law.invention Crystallography chemistry.chemical_compound Thermoelastic damping chemistry law Phase (matter) 0103 physical sciences Ultimate tensile strength Materials Chemistry Ceramics and Composites Silicon carbide Composite material Crystallization 0210 nano-technology |
| Zdroj: | Journal of the American Ceramic Society. 99:3705-3711 |
| ISSN: | 0002-7820 |
| DOI: | 10.1111/jace.14398 |
| Popis: | Microstress in reaction-bonded silicon carbide (RBSiC) has been measured using piezo-Raman spectroscopy. Compressive microstresses as high as 2 GPa exist in the silicon phase and tensile microstresses as high as 2.3 GPa exist in the SiC phase of RBSiC. This is much larger than expected for thermoelastic microstress from coefficient of thermal expansion mismatch would provide. Instead the microstresses arise from the crystallization of liquid silicon. During the reaction bonding process, not all of the silicon reacts to form SiC and there is liquid free silicon. The phase transformation of the free silicon from liquid to solid has a large volume expansion, which results in large residual microstress within the silicon and SiC phases of RBSiC. |
| Databáze: | OpenAIRE |
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