Enhancement of carbon nanotube FET performance via direct synthesis of poly (sodium 4-styrenesulfonate) in the transistor channel
| Autor: | Michael Mertig, Martin Hartmann, René Schubel, Rainer Jordan, M. Toader, Stefan E. Schulz, Sascha Hermann, Thomas Gessner, Linda Scharfenberg |
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| Rok vydání: | 2016 |
| Předmět: |
Materials science
Annealing (metallurgy) Ambipolar diffusion business.industry Transistor General Physics and Astronomy Nanotechnology 02 engineering and technology Carbon nanotube 010402 general chemistry 021001 nanoscience & nanotechnology 01 natural sciences 0104 chemical sciences law.invention Threshold voltage Carbon nanotube field-effect transistor law Photografting Optoelectronics Field-effect transistor Physical and Theoretical Chemistry 0210 nano-technology business |
| Zdroj: | Chemical Physics Letters. 661:1-5 |
| ISSN: | 0009-2614 |
| DOI: | 10.1016/j.cplett.2016.07.049 |
| Popis: | Direct synthesis of poly (sodium 4-styrenesulfonate) (P(NaSS)) inside the channel of single-walled carbon nanotube (SWCNT) field-effect transistors (FETs), is shown to be highly beneficial in improving the device parameters. Starting with monomeric compounds, the FET-channel was in-situ polymerized, using the self-initiated photografting and photopolymerization process. Upon formation of the P(NaSS) polymer matrix, we report improved device-to-device consistency, lower variability in the threshold voltage, higher drain currents and higher on/off ratios. Annealing in vacuum was shown to further improve the device performance and induce an ambipolar behavior. Moreover, those FET devices showed a long-term stability even under ambient environment. |
| Databáze: | OpenAIRE |
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