Effects of$hboxH_2$ Annealing and Polysilicon Emitter Structure on$hboxH_FE$ of n–p–n Bipolar Junction Transistors
| Autor: | Sung-ryoul Bae, Tae-Jin Kim, Dae-Hyung Cho, Dong-Kyun Nam, Kye-Won Maeng |
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| Rok vydání: | 2005 |
| Předmět: |
Materials science
Annealing (metallurgy) business.industry Polysilicon depletion effect Doping Bipolar junction transistor Electrical engineering Dangling bond Condensed Matter Physics Industrial and Manufacturing Engineering Electronic Optical and Magnetic Materials Ion implantation Optoelectronics Electrical and Electronic Engineering p–n junction business Common emitter |
| Zdroj: | IEEE Transactions on Semiconductor Manufacturing. 18:649-654 |
| ISSN: | 0894-6507 |
| DOI: | 10.1109/tsm.2005.858507 |
| Popis: | This paper presents the effects of H/sub 2/ annealing and polysilicon emitter structures on H/sub FE/ characteristics of n-p-n bipolar junction transistors. The increase of the number of H/sub 2/ annealing steps results in the device performance (H/sub FE//spl times/V/sub A/) improvement by 27.8%, due to the formation of H-Si dangling bonds, which allow the decrease of the base current. In addition, the bilayer of undoped polysilicon deposition/ion implantation and in situ doped polysilicon in the ploy emitters greatly improve the level of H/sub FE/ reliability and 1/f noise characteristic. The experimental results of H-Si dangling bond property at the polysilicon grain boundaries and polysilicon interface with the H/sub 2/ annealing steps in n-p-n bipolar junction transistor formulation will be also presented. |
| Databáze: | OpenAIRE |
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