Effects of Cu from ZnTe:Cu contacts in CdS/CdTe cells

Autor:	C. Narayanswamy, Timothy A. Gessert, Anna Duda, Sally Asher, D. H. Rose
Rok vydání:	2002
Předmět:	Secondary Ion Mass Spectroscopy Materials science chemistry Contact resistance Doping Analytical chemistry chemistry.chemical_element Fill factor Copper Electrical contacts Cadmium telluride photovoltaics Deposition temperature
Zdroj:	Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036).
DOI:	10.1109/pvsc.2000.915929
Popis:	CdS/CdTe devices processed with ZnTe:Cu/Ti back contacts are studied as a function of contact deposition temperature between /spl sim/200/spl deg/C and /spl sim/400/spl deg/C. Both the open-circuit voltage (V/sub oc/) and fill factor (FF) increase with temperature. High-resolution secondary ion mass spectroscopy shows Cu concentration in the CdTe region increases due to CdCl/sub 2/ treatment, whereas Cu concentration in the CdS region increases with deposition temperature. Measurements of specific contact resistance suggest that Cu diffusing from the contact interface significantly increases the specific contact resistance at the ZnTe:Cu/Ti interface, resulting in an interface with dominant resistance loss.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::ecd860080ea32a344b494d18d10eb455 https://doi.org/10.1109/pvsc.2000.915929 Zobrazit plný text záznamu