Autor:	T. E. Whall
Rok vydání:	1992
Předmět:	Weak localization Materials science Condensed matter physics Hubbard model Schottky barrier Doping Density of states General Physics and Astronomy Metal–insulator transition Electron localization function Mott transition
Zdroj:	Contemporary Physics. 33:369-381
ISSN:	1366-5812 0010-7514
DOI:	10.1080/00107519208211064
Popis:	Ultra-thin doping layers of ≤ 1 nm in width may now be incorporated into semiconductors, to form two-dimensional disordered systems. The low-temperature electrical properties and some device applications of these so-called delta layers are discussed
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::ecd190e16eb9d8da8b051521fccc563e https://doi.org/10.1080/00107519208211064 Zobrazit plný text záznamu