| Autor: |
J.-B. Moulet, T. Signamarcheix, S. Ballandras, E. Courjon, Thierry Baron, William Daniau |
| Rok vydání: |
2015 |
| Předmět: |
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| Zdroj: |
2015 Joint IEEE International Symposium on the Applications of Ferroelectric (ISAF), International Symposium on Integrated Functionalities (ISIF), and Piezoelectric Force Microscopy Workshop (PFM). |
| DOI: |
10.1109/isaf.2015.7172709 |
| Popis: |
SAW devices are widely used for radio-frequency (RF) telecommunication filtering and the number of SAW filters, resonators or duplexers is still increasing in RF stage of cellular phones. Therefore, a strong effort is still dedicated to reduce as much as possible their sensitivity to environmental parameters and more specifically to temperature. Bonding processes have been developed at FEMTO-ST and CEA-LETI using either Au/Au or direct bonding techniques for the fabrication of composite wafers combining materials with very different thermoelastic properties, yielding innovative solutions for about-zero temperature coefficient of frequency (TCF) bulk acoustic wave devices. In the present work, this approach has been applied to (YXl)/42° lithium tantalate plates, bonded onto (100) silicon wafers and thinned down to 25 µm. The leading idea already explored by other groups as mentioned in introduction consists in impeding the thermal expansion of the piezoelectric material using silicon limited expansion. 2 GHz resonators have been built on such plates and tested electrically and thermally, first by tip probing. A dramatic reduction of the TCF is observed for all the tested devices enabling to reduce the thermal drift of the resonators down to a few ppm. K−1 within the standard temperature range. We then propose an analysis of the frequency-temperature behavior of the device to improve the resonator design to use these wafers for industrial applications. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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