3-D effects in emitter-base junctions in advanced silicon bipolar transistors
| Autor: | J. van Dijk, G.A.M. Hurkx, W.J.M.J. Josquin, M.P.G. Knuvers |
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| Rok vydání: | 1989 |
| Předmět: |
Materials science
Silicon business.industry Heterostructure-emitter bipolar transistor Bipolar junction transistor Transistor chemistry.chemical_element Electronic Optical and Magnetic Materials law.invention chemistry law Physics::Accelerator Physics Optoelectronics Electrical and Electronic Engineering business Absolute scale Order of magnitude Common emitter Leakage (electronics) |
| Zdroj: | IEEE Transactions on Electron Devices. 36:2630-2631 |
| ISSN: | 1557-9646 0018-9383 |
| DOI: | 10.1109/16.43763 |
| Popis: | Summary form only given. The authors report experimental results on double-polysilicon self-aligned n-p-n transistors that clearly indicate that the emitter-base reverse characteristics are inherently limited by three-dimensional effects in the corners of the emitter, and that two-dimensional considerations fail to explain many results for a large variety of experimental conditions. Without any exception it is found that the emitter-base reverse characteristics of narrow emitters (14*0.8 mu m/sup 2/) shown higher reverse leakage currents than large emitters (14*10 mu m/sup 2/), even when compared on an absolute scale. In addition it appears that a large walled emitter (i.e. with two sides overlapping the field oxide) tends to show far better reverse characteristics than a large nonwalled emitter with a common rectangular geometry. The difference in leakage current at a given reverse bias can be as high as two orders of magnitude. The results obtained can be explained qualitatively in terms of the three-dimensional concentration profiles of the boron under the oxide sidewall spacer in the corner of an emitter. > |
| Databáze: | OpenAIRE |
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