Chemical Vapor Cleaning of 6H‐SiC Surfaces
| Autor: | J. P. Barnak, Robert F. Davis, Robert J. Nemanich, Sean W. King, R. Scott Kern, M. C. Benjamin |
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| Rok vydání: | 1999 |
| Předmět: |
Auger electron spectroscopy
Renewable Energy Sustainability and the Environment Chemistry Annealing (metallurgy) Analytical chemistry Thermal desorption Oxide Mineralogy Atmospheric temperature range Condensed Matter Physics Surfaces Coatings and Films Electronic Optical and Magnetic Materials chemistry.chemical_compound X-ray photoelectron spectroscopy Monolayer Materials Chemistry Electrochemistry Stoichiometry |
| Zdroj: | Journal of The Electrochemical Society. 146:3448-3454 |
| ISSN: | 1945-7111 0013-4651 |
| DOI: | 10.1149/1.1392494 |
| Popis: | The techniques (temperature range of study) of in situ thermal desorption (500-1100°C) and chemical vapor cleaning (CVC) via exposure to SiH 4 and/or C 2 H 4 (750-1100°C) have been investigated for preparing 6H SiC [(0001) Si , (0001) C , (1120), and (1010)] surfaces suitable for epitaxial growth of SiC and III-nitride films, and are compared with regard to surface purity, stoichiometry, and structural order. Oxide removal below the detection limits of Auger electron spectroscopy was achieved for all orientations via annealing in 200 L SiH 4 at 850-900°C or 200° lower than necessary by thermal desorption. No non-SiC carbon was detected on the surface by X-ray photoelectron spectroscopy. An approximately one-tenth of a monolayer of oxygen coverage and significant quantities of non-SiC carbon were detected for all 6H-SiC surfaces prepared by thermal desorption. In contrast to the predominantly non-SiC carbon-rich surfaces prepared by thermal desorption, the stoichiometry of the SiC surfaces prepared by CVC could be manipulated from Si-rich to C-rich without non-SiC carbon formation by either extending the SiH 4 exposures or by following with C 2 H 4 exposure. The latter surfaces also had lower concentrations of both oxygen and non-SiC carbon and increased surface order. |
| Databáze: | OpenAIRE |
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