A Study of the Composition Gradient of GaInAsP Layers Formed on InP by Vapor-Phase Epitaxy
| Autor: | R. V. Levin, V. I. Vasil’ev, B. Ya. Ber, A. N. Gorokhov, V. I. Kuchinskii, M. P. Scheglov, G. S. Gagis, D. Yu. Kazantsev, B. V. Pushnyi, T. B. Popova, A. E. Marichev |
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| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Materials science Physics and Astronomy (miscellaneous) Vapor phase Analytical chemistry 02 engineering and technology Substrate (electronics) 021001 nanoscience & nanotechnology Epitaxy 01 natural sciences Lattice mismatch 0103 physical sciences Composition (visual arts) 0210 nano-technology Layer (electronics) Solid solution |
| Zdroj: | Technical Physics Letters. 44:1127-1129 |
| ISSN: | 1090-6533 1063-7850 |
| DOI: | 10.1134/s1063785018120593 |
| Popis: | Gradual variation of the content y of Group-V components by Δy of up to 0.08 across the thickness (600–850 nm) of an epitaxial layer has been observed for Ga1 – xInxAsyP1 – y solid solutions (x = 0.86, y = 0.07–0.42) produced on InP by metal-organic vapor-phase epitaxy under lowered pressure, although the composition of the gas mixture, temperature, and pressure were maintained invariable in the course of the growth process. For different gas mixture compositions, the value of Δy and the manner of its variation were different. An analysis of the data obtained demonstrated that Δy is due to the deformations that appear in a growing layer because of the lattice mismatch with the substrate. |
| Databáze: | OpenAIRE |
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