Theoretical Study of Midwave Infrared HgCdTe nBn Detectors Operating at Elevated Temperatures
| Autor: | Jarek Antoszewski, Nima Dehdashti Akhavan, Gregory Jolley, Lorenzo Faraone, Gilberto A. Umana-Membreno |
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| Rok vydání: | 2015 |
| Předmět: |
Materials science
business.industry Infrared Doping Detector Condensed Matter Physics Electronic Optical and Magnetic Materials Photodiode law.invention Auger Barrier layer chemistry.chemical_compound Optics chemistry law Materials Chemistry Optoelectronics Mercury cadmium telluride Electrical and Electronic Engineering business Dark current |
| Zdroj: | Journal of Electronic Materials. 44:3044-3055 |
| ISSN: | 1543-186X 0361-5235 |
| Popis: | We report a theoretical study of mercury cadmium telluride (HgCdTe) unipolar n-type/barrier/n-type (nBn) detectors for midwave infrared (MWIR) applications at elevated temperatures. The results obtained indicate that the composition, doping, and thickness of the barrier layer in MWIR HgCdTe nBn detectors can be optimized to yield performance levels comparable with those of ideal HgCdTe p–n photodiodes. It is also shown that introduction of an additional barrier at the back contact layer of the detector structure (nBnn+) leads to substantial suppression of the Auger generation–recombination (GR) mechanism; this results in an order-of-magnitude reduction in the dark current level compared with conventional nBn or p–n junction-based detectors, thus enabling background-limited detector operation above 200 K. |
| Databáze: | OpenAIRE |
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