Autor: |
Jan-Peter Urbach, Takashi Yasui, Axel Zibold, Christof Matthias Dr. Schilz, Wolfgang Degel, Klaus Boehm, Peter Kuschnerus, Silvio Teuber Semmler, Yuji Kobiyama, Iwao Higashikawa |
Rok vydání: |
2004 |
Předmět: |
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Zdroj: |
SPIE Proceedings. |
ISSN: |
0277-786X |
DOI: |
10.1117/12.557762 |
Popis: |
Measurement by AIMS is the final step of mask defect control, and its accuracy is the critical issue to make guaranty and improve the mask quality. AIMS157 has developed by Carl Zeiss SMS GmbH and is expected to make a contribution to accelerate the 157nm lithography technology development. AIMS157 has been challenging to solve 157nm specific optical issues with accuracy for 65nm node photomask specifications. This paper discusses the defect measurement by AIMS157. Evaluation using programmed defect mask, repeatability is analyzed changing the optical parameters. Static and dynamic measurements were evaluated and the result shows the improved accuracy. It shows the possibility to be applied on 65nm node and smaller feature size. |
Databáze: |
OpenAIRE |
Externí odkaz: |
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