Measuring temperature of silicon monocrystals using spectral pyrometry
| Autor: | A. N. Magunov, A. O. Zakharov, B. A. Lapshinov |
|---|---|
| Rok vydání: | 2014 |
| Předmět: |
Materials science
Silicon business.industry chemistry.chemical_element Condensed Matter Physics Temperature measurement Electronic Optical and Magnetic Materials law.invention Crystal Wavelength Optics chemistry law Thermal radiation Materials Chemistry Optoelectronics Surface layer Electrical and Electronic Engineering Laser heating business Pyrometer |
| Zdroj: | Russian Microelectronics. 43:201-206 |
| ISSN: | 1608-3415 1063-7397 |
| DOI: | 10.1134/s1063739714010077 |
| Popis: | Spectrums of the thermal radiation of silicon monocrystals that are heated by a continuous laser beam (wavelength of 1.064 μm) are recorded within the wavelength range λ = 200–2500 nm. Silicon temperatures are determined within the interval T = 900–1700 K using the spectral pyrometry. The processing of a sequence of spectrums recorded with the frequency 100–1000 Hz allows the evolution of the crystal temperature to be restored during laser heating in the case when heating rates are sufficiently small. Peculiarities of different spectral intervals are discussed as applied to the problem of measuring the silicon temperature. During the laser heating of silicon, the temperature of a surface layer is shown to be heterogeneous with respect to depth, which is manifested in differences between average values calculated using thermal radiation spectrums and the surface temperature. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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