Effect of implanted helium on thermal diffusivities of SiC/SiC composites

Autor:	Tomitsugu Taguchi, K. Shimura, Naoki Igawa, Shiro Jitsukawa
Rok vydání:	2006
Předmět:	Nuclear and High Energy Physics Materials science stomatognathic system chemistry Annealing (metallurgy) Thermal chemistry.chemical_element Composite material Thermal diffusivity Instrumentation Helium
Zdroj:	Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 242:469-472
ISSN:	0168-583X
Popis:	The effect of implanted helium (He) on the thermal diffusivities of SiC/SiC composites was investigated. In the result, thermal diffusivities of SiC/SiC composites decreased after He implantation. The thermal diffusivities of implanted specimens were partly recovered by annealing. From the obtained results in this study, the defect concentration induced by He implantation in the specimens was estimated. The defect concentration rapidly decreased around 500 °C. The reason is that He release from SiC starts at 500 °C. The defect concentration induced by He implantation increased with increasing the amount of implanted He in the He implantation range less than 30 appm He.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::eca12a03528c75a8e11dc41adeef5f35 https://doi.org/10.1016/j.nimb.2005.08.126 Zobrazit plný text záznamu Full Text from ScienceDirect