Schottky Barrier Height Modulation by Er Insertion and Its Application to SB-MOSFETs

Autor:	Kohei Noguchi, Wataru Hosoda, Katsuya Matano, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Nobuyuki Sugii, Arun Chandorkar, Takeo Hattori, H. Iwai
Rok vydání:	2008
Zdroj:	ECS Meeting Abstracts. :1851-1851
ISSN:	2151-2043
DOI:	10.1149/ma2008-02/23/1851
Popis:	not Available.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::eca09554c3e7edf01e6700c4899887f3 https://doi.org/10.1149/ma2008-02/23/1851 Zobrazit plný text záznamu