Modulation of charge trapping and current-conduction mechanism of TiO2-doped HfO2 gate dielectrics based MOS capacitors by annealing temperature

Autor:	D.Q. Xiao, Minghua Liu, Rui Ma, Xi-Bao Chen, J.W. Zhang, Z.Q. Sun, Gang He, J. Gao, P. Jin, Hanshuang Chen
Rok vydání:	2015
Předmět:	Materials science Annealing (metallurgy) business.industry Mechanical Engineering Metals and Alloys Schottky diode Charge density Dielectric Thermal conduction law.invention Capacitor Mechanics of Materials law Electric field Materials Chemistry Optoelectronics Electrical measurements business
Zdroj:	Journal of Alloys and Compounds. 647:1054-1060
ISSN:	0925-8388
DOI:	10.1016/j.jallcom.2015.06.042
Popis:	Current conduction mechanisms of Hf1−xTixO2-gated metal–oxide–semiconductor (MOS) capacitors depending on various post-annealing temperature (PDA) have been investigated. The sample subjected to 400 °C annealing exhibits superior performance with negligible hysteresis memory window shift (ΔVfb = 0.005 V) and lowest gate leakage current density (5.4 × 10−5 A/cm−2 at Vg = 2 V). In addition, evolution of density of interface traps (Dit), border charger density (Not) and oxide charge density (Qox) as a function of annealing temperature were investigated in details. Detailed electrical measurements reveal that the dominant current conduction behaviors are Poole–Frankel (P–F) emission in the region of low electric fields and Schottky Emission (SE) in the region of high electric fields for gate injection. For substrate injection, however, is mainly via Ohm's conduction, Schottky emission (SE) conduction mechanism serves in low applied field in the samples, respectively.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::ec9e79d690b0061c00203b88a292767d https://doi.org/10.1016/j.jallcom.2015.06.042 Zobrazit plný text záznamu Full Text from ScienceDirect