An anomalous increase in the fill factor of the current-voltage characteristic in the short-wave region of the solar spectrum for a silicon photocell containing a porous-silicon structure

Autor:	I. Stupakova, E. Šatkovskis, V. Zagadskij, R. Mitkevičius
Rok vydání:	2013
Předmět:	Materials science Physics and Astronomy (miscellaneous) Silicon business.industry chemistry.chemical_element Photoelectric effect Porous silicon Anode Wavelength chemistry Etching (microfabrication) Optoelectronics business Current density Common emitter
Zdroj:	Technical Physics Letters. 39:945-948
ISSN:	1090-6533 1063-7850
DOI:	10.1134/s1063785013110114
Popis:	The possibility of increasing the efficiency of a silicon photocell by forming a porous-silicon structure in its bulk has been proposed and studied. Photocells produced from p-type single-crystal silicon plates by the diffusion method were investigated. Porous-silicon structures were formed by photoelectric anodic etching in HF-ethanol mixture. Current density and etching time were assigned by a computer in ranges of 6–14 mA/cm2 and 10–20 s, respectively. It has been found that the porous-silicon structure located in the emitter bulk substantially improves efficiency of photocells. At wavelength λ ∼ 550 nm, an anomalously large (by five to nine times) increase in efficiency was observed.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::ec9187296a72e33131010b28d6b7ff72 https://doi.org/10.1134/s1063785013110114 Zobrazit plný text záznamu Plný text ve formátu PDF