Electrical Properties of Atomic Layer Deposited HfO2Gate Dielectric Film Using D2O as Oxidant for Improved Reliability

Autor:	Hyunjun Sim, Hokyung Park, In-Sung Park, Han-Kyoung Ko, Taeho Lee, Jinho Ahn, Hyunsang Hwang
Rok vydání:	2006
Předmět:	Physics and Astronomy (miscellaneous) Dielectric strength Chemistry Gate dielectric General Engineering Analytical chemistry General Physics and Astronomy Time-dependent gate oxide breakdown law.invention Capacitor Atomic layer deposition Deuterium law Kinetic isotope effect Layer (electronics)
Zdroj:	Japanese Journal of Applied Physics. 45:6993-6995
ISSN:	1347-4065 0021-4922
DOI:	10.1143/jjap.45.6993
Popis:	The initial performance and reliability characteristics of metal–oxide–semiconductor (MOS) capacitors with HfO2 films deposited with H2O or D2O as an oxidant and Hf[N(C2H5)(CH3)]4 as a metal precursor using atomic layer deposition (ALD) were investigated. From secondary ion mass spectroscopy (SIMS) analysis, we observed that deuterium was homogeneously incorporated into the HfO2 film using D2O during ALD. Compared with H2O-processed devices, D2O-processed devices exhibit less charge trapping, less interface trap density generation, and longer time-dependent dielectric breakdown (TDDB) under electrical stress. This improvement of reliability characteristics can be explained by the deuterium isotope effect, which leads to a larger bonding strength of deuterium in the HfO2 film and at the HfO2/Si interface.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::ec8a607c8f394729c9663c6a687b6531 https://doi.org/10.1143/jjap.45.6993 Zobrazit plný text záznamu