Effect of oxygen pressure on the synthesis of YBa2Cu3O7−xthin films by post‐deposition annealing

Autor:	M. D. Galloway, John D. Budai, R. Feenstra, T. B. Lindemer
Rok vydání:	1991
Předmět:	Materials science Annealing (metallurgy) Analytical chemistry General Physics and Astronomy Mineralogy chemistry.chemical_element Crystal growth Partial pressure Epitaxy Oxygen Amorphous solid chemistry Torr Thin film
Zdroj:	Journal of Applied Physics. 69:6569-6585
ISSN:	1089-7550 0021-8979
Popis:	The effect of ambient oxygen pressure on the synthesis of epitaxial YBa2Cu3O7−x films on (100) SrTiO3 substrates by post‐deposition annealing of amorphous precursor films was studied for oxygen partial pressures pO2 between 1.0 and 8.0×10−5 atm and annealing temperatures between 890 and 650 °C. A pO2−1/T diagram containing recent literature data regarding YBa2Cu3O7−x oxygen stoichiometry, phase stability, and liquid‐phase formation was compiled to provide guidance for the selection and interpretation of annealing conditions. The results evidence a strong dependency of growth properties on the oxygen pressure with enhanced c‐oriented epitaxy at lower pO2 values. A particularly interesting result is the formation of predominantly c‐oriented films at 740 °C and pO2=2.6×10−4 atm (0.2 Torr). Similar to YBa2Cu3O7−x films produced by in situ laser ablation at the same temperature and oxygen pressure, the films exhibited low ion channeling yields (χmin
Databáze:	OpenAIRE
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