A fractal dimension feature extraction technique for detecting flaws in silicon wafers

Autor: G.T. Stubbendieck, W.J.B. Oldham
Rok vydání: 2003
Předmět:
Zdroj: [Proceedings 1992] IJCNN International Joint Conference on Neural Networks.
Popis: The authors present a feature extraction method for detecting flaws in silicon wafers based on the idea of fractal dimension. They begin by discussing why fractal dimension is a good way to model wafer surface images. They then describe how to calculate the fractal dimension of a computer image of a wafer and how the results of such a calculation can be used for fault detection and image segmentation. The results of the application of this process to some wafer images are included. >
Databáze: OpenAIRE