CAICISS Measurements of As/Si(100) Structure Prepared by Ionized Cluster Beam Method

Autor:	Osamu Ishiyama, Fumihiko Ohtani, Shigeki Hayashi, Makoto Shinohara, Junji Saraie
Rok vydání:	1994
Předmět:	Scattering Chemistry Ionization Cluster (physics) Substrate (electronics) Coaxial Atomic physics Spectroscopy Beam (structure) Ion
Zdroj:	Hyomen Kagaku. 15:384-388
ISSN:	1881-4743 0388-5321
DOI:	10.1380/jsssj.15.384
Popis:	The surface structure of a Si (100) substrate exposed to an As ionized cluster beam (ICB) was investigated by means of coaxial impact collision ion scattering spectroscopy (CAICISS). As a result of the measurements, first, it was proven that the Si surface is not damaged by As ICB exposure, although implanted As atoms of several percent were detected in the surface region. Second, both As and Si atoms from double domains of 2×1 and 1×2, and the predominant domain seems to be 2×1. Furthermore, 1×2 domain of As contributes to a lateral contraction of the surface.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::ec391e4a6da6f7d6a8b853da5e60a540 https://doi.org/10.1380/jsssj.15.384 Zobrazit plný text záznamu