| Popis: |
Single Si1-xGex epilayer on Si buffer layer (~100 nm) was grown by gas source molecular beam epitaxy (GS-MBE) at 640°C. Samples were investigated by transmission electron microscopy. For all the samples investigated, the misfit dislocations were irregularly distributed along the [110] and [110] directions. As the Ge content, x, in Si1-xGex/Si epilayers (x≤0.15) increased, the distribution of dislocations changed from a 2 dimensional to a 3 dimensional network in both the epilayer and buffer-substrate. The majority of misfit dislocations in the Si1-xGex/Si(001) epilayers was of 60° type dislocations. |
