Doping of Al-catalyzed Vapor-liquid-solid Grown Si Nnanowires

Autor:	Sung Jin Whang, Yun Fook Liew, Sungjoo Lee, Hai Chen Zhu, Han Lu Gu, Wei Feng Yang, Byung Jin Cho
Rok vydání:	2007
Předmět:	Materials science X-ray photoelectron spectroscopy chemistry Transmission electron microscopy Scanning electron microscope Etching (microfabrication) Doping Nanowire Analytical chemistry chemistry.chemical_element Boron Single crystal
Zdroj:	MRS Proceedings. 1018
ISSN:	1946-4274 0272-9172
DOI:	10.1557/proc-1018-ee05-20
Popis:	We successfully synthesized high quality single crystal Si nanowires using Al catalyst via vapor-liquid-solid (VLS) mechanism, having diameters ranging from 10 to 200 nm with 10∽20 §­ of length. Characterization of physical and chemical properties of Al-catalyzed Si nanowires using transmission electron microscope (TEM), scanning electron microscope (SEM), X-ray photoelectron spectroscopy (XPS) analysis showed that single crystal Si nanowires can be grown with Al-catalyst at 540 ¡C and selective etching of Al existing at the tip of nanowire can provide metal-free Si nanowires that are compatible with conventional Si-based IC process. By using plasma doping method, it was confirmed that the doping level can be controlled and the boron was successfully introduced on Si substrate with 3×1022/cm3 of peak doping concentration.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::ec30b602f0edb8f97e68176eff32d780 https://doi.org/10.1557/proc-1018-ee05-20 Zobrazit plný text záznamu Full text from SpringerLink