The GMR effect of Cu/Co multilayer on Si(100)

Autor:	T. F. Ying, D. R. Huang, S. C. Ma, Chi-Kuen Lo, D. Y. Chiang, Yeong-Der Yao
Rok vydání:	2000
Předmět:	Materials science Condensed matter physics Magnetic domain Scattering Analytical chemistry chemistry.chemical_element Giant magnetoresistance Condensed Matter Physics Magnetic hysteresis Evaporation (deposition) Copper Electronic Optical and Magnetic Materials chemistry Transition metal Cobalt
Zdroj:	Journal of Magnetism and Magnetic Materials. 209:131-134
ISSN:	0304-8853
DOI:	10.1016/s0304-8853(99)00666-6
Popis:	(Cu/Co) 10 was deposited on SiO 2 /Si(1 0 0) and Si(1 0 0) respectively, by e-beam evaporation. For the multilayer on Si(1 0 0), the MR was about 9.1% at 10 K and it reduced to 4% at room temperature, while for the sample on SiO 2 /Si(1 0 0), the MR at 10 and 300 K were 19%, and 7.2%, respectively. The MR extracted from minor R – H loop was higher than that in major R – H loop. This could be due to the increment of domain wall which enhances the electrons scattering.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::ec139a6bde5ce06e347b0a7f2db28a16 https://doi.org/10.1016/s0304-8853(99)00666-6 Zobrazit plný text záznamu Full Text from ScienceDirect