Improved control of the phosphorous surface concentration during in-line diffusion of c-Si solar cells by APCVD

Autor:	Kristopher O. Davis, Helge Haverkamp, Heiko Zunft, Winston V. Schoenfeld, Kaiyun Jiang, Carsten Demberger, Dirk Habermann
Rok vydání:	2013
Předmět:	Materials science Silicon Diffusion Doping Analytical chemistry chemistry.chemical_element Condensed Matter Physics Monocrystalline silicon chemistry Deposition (phase transition) General Materials Science Wafer Crystalline silicon Common emitter
Zdroj:	physica status solidi (RRL) - Rapid Research Letters. 7:319-321
ISSN:	1862-6254
DOI:	10.1002/pssr.201307020
Popis:	Emitter formation for industrial crystalline silicon (c-Si) solar cells is demonstrated by the deposition of phosphorous-doped silicate glasses (PSG) on p-type monocrystalline silicon wafers via in-line atmospheric pressure chemical vapor deposition (APCVD) and subsequent thermal diffusion. Processed wafers with and without the PSG layers have been analysed by SIMS measurements to investigate the depth profiles of the resultant phosphorous emitters. Subsequently, complete solar cells were fabricated using the phosphorous emitters formed by doped silicate glasses to determine the impact of this high-throughput doping method on cell performance. (© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
Databáze:	OpenAIRE
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