GaAs first-spacer-layer thickness dependence of polarized photoluminescence properties of closely-stacked InAs/GaAs quantum dots with long-wavelength emission
| Autor: | Takashi Kita, Yusuke Tajiri, Toshiyuki Kaizu |
|---|---|
| Rok vydání: | 2016 |
| Předmět: |
Coupling
Photoluminescence Materials science Condensed Matter::Other business.industry Stacking Physics::Optics Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Polarization (waves) Layer thickness Gallium arsenide Condensed Matter::Materials Science chemistry.chemical_compound Long wavelength chemistry Quantum dot Optoelectronics business |
| Zdroj: | 2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS). |
| DOI: | 10.1109/iciprm.2016.7528860 |
| Popis: | We investigated effects of the GaAs first-spacer-layer thickness on polarized photoluminescence properties of closely-stacked InAs/GaAs quantum dots (QDs) with long-wavelength emission. As the GaAs first-spacer-layer thickness was decreased, the [001]-polarization component increased relative to the [110] component due to an enhancement of the electronic coupling between the QDs along the stacking direction. In addition, as the GaAs first-spacer-thickness was decreased, the emission from the incompletely coupled QDs that failed to couple was suppressed. Therefore, the polarization properties of closely-stacked QDs are very sensitive to the GaAs first-spacer-thickness. |
| Databáze: | OpenAIRE |
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