Formation of nanovoids/microcracks in high dose hydrogen implanted AlN
| Autor: | R. Scholz, U. Gösele, Silke Christiansen, Rajendra Singh |
|---|---|
| Rok vydání: | 2008 |
| Předmět: |
Materials science
Hydrogen Aluminium nitride Annealing (metallurgy) Mineralogy chemistry.chemical_element Blisters Surfaces and Interfaces Condensed Matter Physics Epitaxy Surfaces Coatings and Films Electronic Optical and Magnetic Materials chemistry.chemical_compound chemistry Transmission electron microscopy Agglomerate Materials Chemistry medicine Sapphire Electrical and Electronic Engineering medicine.symptom Composite material |
| Zdroj: | physica status solidi (a). 205:2683-2686 |
| ISSN: | 1862-6319 1862-6300 |
| DOI: | 10.1002/pssa.200824159 |
| Popis: | Aluminium nitride (AlN) epitaxial layers grown on sapphire were implanted with 100 keV hydrogen, H2+ ions with doses in the range of 5 × 1016 cm–2 to 2.5 × 1017 cm−2 and subsequently annealed at temperatures up to 800 °C in order to observe the formation of surface blisters. The implantation-induced damage in AlN was analyzed by cross-sectional transmission electron microscopy, which revealed a band of defects extending from 330–550 nm from the surface of AlN. Higher magnification TEM images showed the formation of nanovoids that are distributed in the damage band. Upon annealing these nanovoids agglomerate leading to the formation of microcracks. Due to the overpressure of hydrogen trapped in the microcracks, surface blisters are eventually formed in the hydrogen implanted AlN. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) |
| Databáze: | OpenAIRE |
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