Front-side mid-level Tungsten TSV integration for high-density 3D applications

Autor:	Lovelace Soirez, Dave Martini, Sara Elizabeth Jensen, Adam Jones, Catherine Bullock, Brian Mattis, James E. Levy
Rok vydání:	2016
Předmět:	Materials science Silicon business.industry Process (computing) High density chemistry.chemical_element Tungsten chemistry CMOS Process integration Electronic engineering Optoelectronics Wafer business
Zdroj:	3DIC
DOI:	10.1109/3dic.2016.7970008
Popis:	We demonstrate a front-side process integration method to insert high-density 1.2um diameter Tungsten (W) Through Silicon Vias (TSVs) into advanced-node logic wafers after metal-4. This late-TSV-middle approach offers the ability to build 3D technology into commercially available 90nm-node CMOS, while avoiding many of the challenges associated with TSV-last integrations. We also demonstrate a TSV-reveal process compatible with small-diameter W TSVs.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::ebeb497eed511c300f0dedca1cbda174 https://doi.org/10.1109/3dic.2016.7970008 Zobrazit plný text záznamu