Highly Resistive Iron-Doped AlInAs Layers Grown by Metalorganic Chemical Vapor Deposition

Autor:	Ishikawa Hideto, Kunio Kaneko, Hiroji Kawai, Mikio Kamada
Rok vydání:	1992
Předmět:	Secondary ion mass spectrometry Silicon Chemistry Electrical resistivity and conductivity Doping General Engineering Analytical chemistry General Physics and Astronomy chemistry.chemical_element Chemical vapor deposition Metalorganic vapour phase epitaxy Activation energy Thin film
Zdroj:	Japanese Journal of Applied Physics. 31:L376
ISSN:	1347-4065 0021-4922
DOI:	10.1143/jjap.31.l376
Popis:	We report for the first time highly resistive iron-doped AlInAs layers grown by metalorganic chemical vapor deposition (MOCVD) using a popular iron doping source, (C5H5)2Fe. The linear relationship between Fe atom concentration of Fe-doped AlInAs layers, which was measured by SIMS analysis, and (C5H5)2Fe flow rate was obtained. To evaluate the effect of Fe doping quantitatively, samples of Si-doped n-AlInAs layers were prepared. The relation between carrier concentration and Fe atom concentration of the layers suggested that one Fe atom killed one carrier of n-type AlInAs. An Fe-doped AlInAs layer, with undoped AlInAs layers, which had a residual carrier concentration of 1∼2×1015 cm-3, showed highly resistive characteristics. We found a deep trap with an activation energy of 0.7 eV using photoexcited DLTS, which may cause compensation.
Databáze:	OpenAIRE
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