InGaAs/GaAs quantum-dot intermixing using arsenic and phosphorus ion implantation-induced disordering
| Autor: | Hery S. Djie, Vincent Aimez, Boon S. Ooi |
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| Rok vydání: | 2006 |
| Předmět: |
Materials science
Photoluminescence Annealing (metallurgy) Inorganic chemistry Analytical chemistry chemistry.chemical_element Condensed Matter Physics Blueshift Ion Inorganic Chemistry Condensed Matter::Materials Science Ion implantation chemistry Quantum dot Materials Chemistry Arsenic Quantum well |
| Zdroj: | Journal of Crystal Growth. 288:40-43 |
| ISSN: | 0022-0248 |
| Popis: | The intermixing of InGaAs/GaAs quantum dot using isoelectric ion implantation followed by rapid thermal annealing is presented. The implantation was carried out at 200 °C with arsenic (As+) and phosphorus (P+) ions, at various doses, where the ions were accelerated at 360 keV with the ion angle tilted by 7°. Compared with impurity-free induced intermixing, the intermixing degree is significantly enhanced by temperature-assisted implantation followed by a rapid thermal annealing below 750 °C. The diffusion transient was observed at a longer annealing duration suggesting the complete intermixing of the implantation-induced damage. A blue shift as large as 126 meV has been observed from the P+-implanted sample, whilst only ∼14 meV has been measured from the SixNy-capped sample after annealing at 750 °C. The result indicates that a highly selective and low-temperature spatial intermixing, which has a strong potential for photonic integration, could be developed. |
| Databáze: | OpenAIRE |
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